Abstract
We present the results of a DARPA sponsored study on the application of Focused Ion Beam (FIB) systems to metrology in advanced lithography for production and process development. Data on top-down measurements, on the effects of FIB imaging, and on milling strategies for cross-sectional preparation are presented for fine-line resist structures. In addition, some preliminary aspects of Ga contamination are addressed in the context of the residual dose and concentration leftover from FIB processing. A standard deviation of 8 nm for the measured line width was observed, which makes FIB metrology competitive with the more established technique of CD SEM analysis.
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