Abstract
Titanium trisulfide (TiS3) is a promising layered semiconductor material. Several-mm-long TiS3 whiskers can be conveniently grown by the direct reaction of titanium and sulfur. In this study, we exfoliated these whiskers using the adhesive tape approach and fabricated few-layered TiS3 field-effect transistors (FETs). The TiS3 FETs showed an n-type electronic transport with room-temperature field-effect mobilities of 18-24 cm(2) V(-1) s(-1) and ON/OFF ratios up to 300. We demonstrate that TiS3 is compatible with the conventional atomic layer deposition (ALD) procedure for Al2O3. ALD of alumina on TiS3 FETs resulted in mobility increase up to 43 cm(2) V(-1) s(-1), ON/OFF ratios up to 7000, and much improved subthreshold swing characteristics. This study shows that TiS3 is a competitive electronic material in the family of two-dimensional (2D) transition metal chalcogenides and can be considered for emerging device applications.
Highlights
Titanium trisulfide (TiS3) is a promising layered semiconductor material
We demonstrate that TiS3 is compatible with the conventional atomic layer deposition (ALD) procedure for Al2O3
Nanoscale graphene[30,31] and MoS2.32–35 Here we demonstrate the validity of this approach for mobility improvement in few-layered TiS3 field-effect transistors (FETs) by coating the devices with a thin layer of a high-κ dielectric, Al2O3, which results in measured field-effect mobilities up to 43 cm[2] V−1 s−1 as well as much improved subthreshold swing (S) characteristics
Summary
Titanium trisulfide (TiS3) is a promising layered semiconductor material. Several-mm-long TiS3 whiskers can be conveniently grown by the direct reaction of titanium and sulfur. We exfoliated these whiskers using the adhesive tape approach and fabricated few-layered TiS3 field-effect transistors (FETs).
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