Abstract
Few‐layer graphene with average thickness of 3 monolayers has been prepared on 6H‐SiC(000) via annealing in argon ambience. The surface structure and morphology are characterized by reflection high‐energy electron diffraction, Raman spectroscopy and atomic force microscopy (AFM). Raman mapping measurement reveals that the graphene layer has high uniformity in doping concentration and strains. The SiC surface after graphitization shows steps with height < 9 nm, and graphene grows continuously across these steps to form large domains. AFM phase images indicate that the SiC surface is completely covered by graphene. Copyright © 2012 John Wiley & Sons, Ltd.
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