Abstract
Well-dispersed FeS2 pyrite nanocrystal inks were produced by bead milling. They were used to produce ultrathin films of ∼55 nm thickness. After annealing at 500 °C, the film thickness decreased, the crystallinity of the films increased, and a small amount of marcasite phase appeared. Optical measurements showed that the absorption coefficient of the annealed films increased as wavelength decreased and finally reached ∼2.2 × 105 cm−1. The annealed films retained p-type semiconductors and a band gap of 0.92 eV. The resistivity and mobility of the pyrite films before and after annealing were 100 Ω cm and 6 cm2 V−1 s−1, and 0.8 Ω cm, 30 cm2 V−1 s−1, respectively.
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