Abstract
Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.
Highlights
Room-temperature ferromagnetism is a significant characteristic for diluted magnetic semiconductor (DMS) materials due to potential application in spintronics.[1]
There have been tremendous research interests in solid materials which are associated with doping transition mental or rare earth elements containing partially filled d or f subshells leading to local magnetic moment.[2,3,4]
4H-SiC single crystal are irradiated by proton at different irradiation dose
Summary
Room-temperature ferromagnetism is a significant characteristic for diluted magnetic semiconductor (DMS) materials due to potential application in spintronics.[1] There have been tremendous research interests in solid materials which are associated with doping transition mental or rare earth elements containing partially filled d or f subshells leading to local magnetic moment.[2,3,4] it brings a controversy over the origin of observed room-temperature ferromagnetism whether it is from intrinsic property or from metal segregation. There have been theoretical evidences showing that semiconductors without d or f electrons can form local magnetic moments and display ferromagnetic ordering.[5,6,7,8] For example, Dev et al.[8] found that defects could induce magnetic moments and mediate a collective ferromagnetism in wide band gap semiconductor materials without doping transition metal elements
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