Abstract
The onset of room-temperature (RT) ferromagnetism (FM) has been experimentally observed in amorphous Ge/SiO2 multilayer films. Both the thickness of the individual layers of SiO2 and that of the Ge layers can influence the ferromagnetic order of the samples. The saturation magnetization (MS) reached a maximum of 18.3 emu/cm3 at RT for the film with structure [Ge(5 nm)/SiO2(8 nm)]3. The zero-field-cooled and field-cooled curves for the film show the coexistence of ferromagnetic and diamagnetic components. Obvious magnetic domains were observed in all of the samples. Ge forms mainly Ge–Ge bonds. In addition, Photoluminescence from interband indirect recombination and transitions between discrete energy levels in Ge nanostructures were observed. The FM in the Ge/SiO2 multilayer films can be attributed to both the quantum size effect and coupling of unpaired spins among the Ge nanostructures. The coupling tends to make the unpaired spins align in a ferromagnetic manner.
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