Abstract
Zn 1-x Fe x O (x = 0.04, 0.06, 0.08, 0.10, 0.12) thin films were grown on Si substrates using reactive magnetron sputtering. X-ray diffraction analyses show that the samples have wurtzite structures with the c-axis orientation. X-ray photoelectron spectroscopy results indicate that the Fe ions are in a +2 charge state in the films. Magnetization measurements indicate that room temperature ferromagnetism is present in films annealed in vacuum while films annealed in air were non-magnetic. The presence of oxygen vacancies in these films may mediate exchange coupling of the dopant ions, resulting in room temperature ferromagnetism.
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