Abstract
This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O2, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.
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