Abstract
The martensitic phase transition in Ni2MnGa related alloys is investigated. The stability of the low temperature phase is assessed by a structural investigation of a cold worked sample. The stability of the low temperature martensitic phase with respect to internal strains is determined. It is argued that the experimental observations are consistent with an electronic mechanism being responsible for causing the martensitic phase transition. Alloying experiments with partial substitution of Ga by either In or Sn show a stronger dependence of the martensitic phase transition on the number of conduction electrons than on the size of atoms or variations of their distances. These experimental findings are consistent with band structure calculations and changes brought about by atomic disorder.
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