Abstract
We have studied theoretically the magnetotransport in a ferromagnetic resonant tunneling diode (FRTD), where alternating magnetic Ga1-xMnxAs and non-magnetic GaAs and AlAs layers give rise to strongly spin-polarization dependent electronic transport. We have studied a FRDT structure having a non-magnetic quantum well between magnetic emitter and collector layers. The infinite order correction to the energy of the band edge due to the exchange interaction between the charge carrier spin and the magnetic moments of the Mn ions is calculated by using Zubarev's double time Green's functions. Then the current-voltage characteristics of the FRTD is calculated as a function of temperature and magnetic field by using a modified Tsu-Esaki formula. In a FRTD the transport depends strongly on the spin- polarization of the magnetic lattice, and in a certain bias voltage range near the negative resistance region the model predicts colossal magnetoresistance at temperatures close to the Curie temperature.
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