Abstract
The magnetic anisotropy of nonimplanted and implanted layers in garnet films misoriented from (111) has been studied by ferromagnetic resonance (FMR). The measured FMR field orientation dependence is consistent with a phenomenological model taking into account the growth-induced and stress-induced anisotropy contributions. The effective uniaxial anisotropy field H∇K, cubic magnetocrystalline anisotropy field H1, and anisotropy fields proportional to the crystallographic misorientation angle Δc:HδK and Hp (orthorhombic anisotropy field) are determined from the resonance field orientation dependence in two different planes. In the implanted layer only two stable equilibrium magnetizations exist. Charged wall motion is consistent with the easy and hard magnetization directions deduced from FMR.
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