Abstract
Ferromagnetic resonance (FMR) measurements have been performed on single-crystal epitaxial Fe and Co films deposited by molecular-beam epitaxy onto {100} and {110} ZnSe/GaAs substrates. In-plane FMR results as a function of magnetic field H were obtained over the frequency range 0.01<f<20.0 GHz by means of a slot line technique. Additional in-plane measurements and measurements with H perpendicular to the plane of the film were performed using a 9.5-GHz microwave cavity. Zero-field results, as well as frequency versus magnetic field dispersions, were obtained with H in the field plane parallel to the 〈100〉 and 〈110〉 axes. The following parameters were deduced from the results on the {100} films: effective magnetization (Fe: 21.6 kOe; Co: 18.1 kOe), gyromagnetic ratio (Fe: 2.11; Co: 2.17), and cubic anisotropy field (K1/M) (Fe: 0.29 kOe; Co: 0.32 kOe). Higher-order terms in the anisotropy field were found to give a negligible contribution. No terms for uniaxial anisotropy energies were included in the fitting equations. These results are in reasonable agreement with published values. Spin-wave excitations were observed in iron films on both substrate orientations, and are found to obey the n2 law. The experimental exchange constant for the iron films was found to be A=(1.9±0.1)×10−6 erg/cm. Spin waves were excited in the {100} Co film, but not in the {110} Co film.
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