Abstract
High concentration of Mn atoms has been successfully incorporated into the chalcopyrite type II–IV–V2 semiconductor CdGeP2 by solid-state reaction technique without causing any structural changes. Polycrystalline powder of the chalcopyrite-related material in Cd–Mn–Ge–P quaternary system has been additionally synthesized by sintering technology. Well-defined M–H hysteresis loops were observed at room temperature in CdGeP2:Mn single crystal and polycrystalline powder samples grown independently. The Curie temperature has been determined to be 320 K for single crystal phase CdxMn1−xGeP2 and 310 K for the polycrystalline powder. Magnetic force microscopy (MFM) observation clearly showed a stripe domain pattern on the Mn-diffused surface of CdGeP2 single crystal. The magneto-optical Kerr ellipticity spectrum of CdGeP2:Mn crystal showed a peak around 1.75 eV at T=300 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
