Abstract
The authors report on the ordered planar arrangements of ferromagnetic MnAs/AlGaAs nanocluster (NC) composites grown on partially SiO2-masked GaAs (111)B substrates by selective-area metal–organic vapor phase epitaxy for lateral magnetoresistive device applications. Each of the NCs in the composites has an elongated shape and a different size to control their magnetized directions and coercive forces. By designing and optimizing the initial SiO2-mask openings formed by electron beam lithography on the template wafers, we fabricate elongated NC composites with a spatial gap of 5 to 10 nm between two NCs and an elongated NC connected to a relatively large MnAs NC electrode. Cross-sectional lattice images taken with a transmission electron microscope show that the interfaces between MnAs and AlGaAs layers of the NCs are atomically abrupt. Magnetic force microscopy at room temperature reveals that the magnetized directions in each of the NC composites are rotated by around 180° when the applied direction of the external magnetic fields is rotated in the opposite direction.
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