Abstract
Mn modulation-doped strain relaxed In 0.75Ga 0.25As/In 0.75Al 0.25As single quantum-well (SQW) structures on (0 0 1)GaAs with an embedded InAs channel are fabricated by molecular beam epitaxy. The properties of the magnetic two-dimensional hole system were investigated by magnetotransport measurements up to 19 T in the temperature range from 50 mK to room temperature. In the low-temperature regime typical features of the quantum Hall effect like quantized plateaus at the Hall resistance and Shubnikov-de Haas oscillations in the longitudinal resistance are observable. The resistance at B=0 T shows a distinct temperature dependence, and at low temperatures, a large negative magnetoresistance. Furthermore, a hysteretic behavior and jumps in the resistance below 300 mK and around B=0 T can be observed for an asymmetric QW structure.
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