Abstract
We have successfully grown single crystal Fe films on InAs(100) and InAs(graded)/GaAs(100) substrates using molecular beam epitaxy. In situ magneto-optical Kerr effect (MOKE) and ex situ alternating gradient field magnetometry (AGFM) measurements show that the films have well defined magnetic properties, and I– V measurements in the temperature range 2.5–304 K show that Fe forms an ohmic contact on InAs. This demonstrates that Fe/InAs is a very promising system for use in future magneto-electronic devices as it has both favorable magnetic and electrical properties. We also show that with careful substrate preparation and suitable growth conditions Fe/GaAs films do not exhibit a magnetically `dead' layer at the interface. A spin-polarized field effect transistor based on Fe/InAs/GaAs has been proposed, which could operate using either an external electric field or an external magnetic field.
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