Abstract
Possible methods and problems of the development of magnetoresistive memory with electric field assisted writing have been considered. It has been shown that the most promising is the memory based on the compensated cut of multiferroic bismuth ferrite BiFeO3. Small values of the weak ferromagnetic moment and linear magnetoelectric effect in BiFeO3 are not obstacles to the realization of the magnetoresistive memory. Of interest is the memory switchable via piezoelectric layer induced elastic stresses, which uses the bistability of magnetization of the ferromagnetic layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.