Abstract
Possible methods and problems of the development of magnetoresistive memory with electric field assisted writing have been considered. It has been shown that the most promising is the memory based on the compensated cut of multiferroic bismuth ferrite BiFeO3. Small values of the weak ferromagnetic moment and linear magnetoelectric effect in BiFeO3 are not obstacles to the realization of the magnetoresistive memory. Of interest is the memory switchable via piezoelectric layer induced elastic stresses, which uses the bistability of magnetization of the ferromagnetic layer.
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