Abstract
In this letter, we present electrical and magnetic characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs), along with the effect of pseudomorphic Si as a passivating interlayer on GaAs(001) grown by molecular beam epitaxy. Ultrathin HfO2 high-k gate dielectric films (3–15 nm) have been grown on Si/GaAs(001) structures through evaporation of a Hf/HfO2 target in NO2 gas. The lowest interface states density Dit at Au/HfO2/Si/GaAs(001) MOS-structures were obtained in the range of (6−13)×1011 eV−1 cm−2 after annealing in the 400–500 °C temperature range as a result of HfO2 crystallization and the Si layer preservation in non-oxidized state on GaAs. HfO2-based MOSCAPs demonstrated the ferromagnetic properties which were attributed to the presence of both cation and anion vacancies according to the first-principle calculations. Room-temperature ferromagnetism in HfO2 films allowed us to propose a structure for the ferromagnetic MOS spin-detector.
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