Ferromagnetic, ferroelectric and magnetoelectric properties of (001)-oriented Pb(Zr0.52Ti0.48)O3/La0.67Sr0.33MnO3 composite films deposited on Si substrates using chemical solution deposition

Abstract

Using (001)-oriented LaNiO3 (LNO) as a buffer layer, the ferromagnetic-ferroelectric layered composite film of Pb(Zr0.52Ti0.48)O3/La0.67Sr0.33MnO3 (PZT/LSMO) with a (001) orientation was deposited on a Si (100) substrate through a chemical solution deposition (CSD) method. The LNO buffer layer promotes the (001) preferential orientation and the columnar growth of the overlying LSMO and PZT layers. The oriented PZT/LSMO/LNO film has soft ferromagnetism characteristics, and a higher saturated magnetization (750.9 emu/cm3) compared with the non-oriented one. The effects of the orientation and the selection of the bottom electrode (BE) on ferroelectric properties of PZT/LSMO/LNO composite films were investigated. Using LNO as the BE, the oriented PZT/LSMO/LNO film exhibits the highest remnant polarization (Pr) of 30.0 μC/cm2 and the lowest leakage current density of 10−6 A/cm2 at 300 kV/cm. The oriented PZT/LSMO/LNO film also exhibits a good magnetoelectric (ME) effect and shows the maximum ME voltage coefficient αE of 125.9 mV/cm·Oe at room temperature. Our investigation provides an effective way to replace the expensive single-crystal substrates, and to promote the application of ferromagnetic-ferroelectric composite films into the Si-based microelectronic field.