Abstract
Dielectric and magnetic properties of A-site substituted YMnO3 epitaxial films were studied. Stoichiometric epitaxial YMnO3 films clearly show ferroelectric behavior in P–E and C–V measurements. The I–V property is well explained by the Pool–Frenkel-type carrier emission with p-type conduction due to the existence of Mn4+, and the activation energy is calculated to be 0.58 eV. The leakage current decreases by substituting Y for Zr and increases by Li or Mg substitution. Although YMnO3 films exhibit antiferromagnetic magnetization behavior regardless of the crystallographic orientation and the carrier concentration, Li-doped sample displays parasitic ferromagnetic behavior (weak ferromagnetism). Substituting Y for Yb enhances the ferromagnetic interaction.
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