Ferroelectrics Based on HfO2 Film

Chong-Myeong Song,Hyuk-Jun Kwon

doi:10.3390/electronics10222759

Chong-Myeong Song, Hyuk-Jun Kwon

Open Access

https://doi.org/10.3390/electronics10222759

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Abstract

The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO2 has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have rapidly progressed in the past decade. Ferroelectricity can be induced in HfO2 by various deposition methods and heat treatment processes. By combining ferroelectric materials with field-effect transistors, devices that combine logic and memory functions can be implemented. Ferroelectric HfO2-based devices show high potential, but there are some challenges to overcome in endurance and characterization. In this paper, we discuss the fabrication and characteristics of ferroelectric HfO2 film and various applications, including negative capacitance (NC)), Ferroelectric random-access memory (FeRAM), Ferroelectric tunnel junction (FTJ), and Ferroelectric Field-effect Transistor (FeFET).

Highlights

With the increasing demand for AI technology, driven by the development of machine learning and deep learning, demand for computing power is increasing [1]
Ferroelectric HfO2 can be fabricated by inducing an orthorhombic phase using various dopants and deposition methods
In order to obtain a uniform film on the entire surface, it seems that among various materials Zr is suitable for Hf doping because its atomic structure and atomic radius are similar

Summary

Introduction

With the increasing demand for AI technology, driven by the development of machine learning and deep learning, demand for computing power is increasing [1]. There is a bottleneck in the von Neumann architecture still widely in use today, in that data cannot be processed and read simultaneously. This is due to the structure, where the storage space and computational space are separated. This bottleneck leads to low energy efficiency when processing large amounts of data. This review paper mainly discusses key points about the fabrication and applications of ferroelectric HfO2 films.

Fabrication of Ferroelectric HfO2 Film

Sputtering

Thermal Annealing

Analysis of Ferroelectric HfO2 Film

Conclusions