Ferroelectricity and pseudo-coherent growth in HfO2/SrHfO3 nanolaminates

Abstract

Ferroelectricity in thin films of HfO2 has been the subject of extensive studies in materials science as well as device applications. The emergence of ferroelectricity is attributable to the orthorhombic phase (Pca21) of HfO2, stabilized in the films by metal-element doping, strains from substrates and electrode films, and oxygen deficiency. Recently, ferroelectricity has been reported in nanolaminates of HfO2 with other oxides such as ZrO2 and Al2O3, implying that nanolaminates are another effective way to bring about ferroelectricity in HfO2. However, the mechanism of orthorhombic phase stabilization in nanolaminates is not fully understood. In this study, we demonstrated that ferroelectricity emerges in nanolaminates consisting of undoped HfO2 and perovskite SrHfO3 deposited on Sn-doped In2O3 bottom electrodes, when the thickness of HfO2 layers was ≥6 nm. For nanolaminates in which the thickness of the HfO2 layers was ≤5 nm, ferroelectricity was remarkably suppressed due to Sr-incorporation into the HfO2 layers at the interface. In those nanolaminates, the crystal orientations of HfO2 grains were well aligned throughout the HfO2 layers, indicating that the HfO2 layers grew in a pseudo-coherent manner. This study aids to understand the stabilization of the ferroelectric orthorhombic phase in nanolaminates in terms of their structural properties.