Abstract
The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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