Ferroelectric SnPz/In2Se3 as a Stable and Durable Non-Volatile 2D Ferroelectric Memory Material

Abstract

In ferroelectric memory, the repeated application of external electric fields can cause ferroelectric fatigue, limiting its stability and service life, especially as the storage unit size decreases. To address this issue, we conducted first-principles research on a SnPz/In2Se3 structure and examined its structure under different polarization directions. Our analysis revealed significant differences in the adsorption position of Sn atoms depending on the polarization direction, suggesting that SnPz/In2Se3 could be a highly stable ferroelectric storage material. Moreover, the polarization-induced changes in the electronic structure near the Fermi level, which allowed for the use of tunneling current and obtaining stored information without causing the ferroelectric fatigue effect during information readout. These findings highlight the potential of SnPz/In2Se3 to significantly extend the lifespan of ferroelectric materials, reduce energy consumption, and minimize the environmental impact of discarded electronic devices.