Abstract
A combined chemical pressure and substrate biaxial pressure crystal engineering approach was demonstrated for producing highly epitaxial Sm-doped BiMnO3 (BSMO) films on SrTiO3 single crystal substrates, with enhanced magnetic transition temperatures, TC up to as high as 140 K, 40 K higher than that for standard BiMnO3 (BMO) films. Strong room temperature ferroelectricity with piezoresponse amplitude, d33 = 10 pm/V, and long-term retention of polarization were also observed. Furthermore, the BSMO films were much easier to grow than pure BMO films, with excellent phase purity over a wide growth window. The work represents a very effective way to independently control strain in-plane and out-of-plane, which is important not just for BMO but for controlling the properties of many other strongly correlated oxides.
Highlights
Multiferroic materials have attracted wide interest due to their promising practical applications based on the coexistence of magnetism and ferroelectricity, the coupling which gives rise to magnetoelectricity (ME).[1−4] With these materials, there is the possibility of creating new kinds of low energy computer memory
The improved d33 enhanced d33 reported for Sm doped is consistent with BiFeO3 films.[34−36] the Through a new combined chemical pressure and substrate biaxial pressure crystal engineering approach in thin films, we have demonstrated significantly improved multiferroic properties in BSMO films at the same time as making the growth of phase pure films more facile
The ferromagnetic transition temperature was increased in BSMO by ∼40 K to up to 140 K, and the piezoresponse amplitude at room temperature was 10 pm/V, much higher than that reported previously in any BMO film
Summary
Multiferroic materials have attracted wide interest due to their promising practical applications based on the coexistence of magnetism and ferroelectricity, the coupling which gives rise to magnetoelectricity (ME) (or ferroelectromagnetism).[1−4] With these materials, there is the possibility of creating new kinds of low energy computer memory. Within single-phase multiferroic materials, BiMnO3 (BMO) has been extensively investigated because among the many transition metal perovskites which are ferroelectric, BMO is rare as it is a ferromagnetic (FM) material (maximum reported magnetic transition temperature, TC, is ∼100 K).[5,6] More recent theoretical and experimental results show bulk BMO has a centrosymmetric monoclinic structure (C2/c), which means the ground state of BMO is not ferroelectric (FE).[7] in bulk BMO the ferroelectric transition temperature TFE is measured to be ∼400 K, saturation polarization is low, only 0.1 μC/cm[2] (at ∼90 K).[5,6] FE has been reported in films with Pr ∼ 23 μC/cm[2] at 5 K, but here, the FM transition temperature (TC ∼ 85 K) and magnetic moment (M) are reduced.[7] Solovyev et al proposed that hidden antiferromagnetic (AFM) ordering is responsible for ferroelectricity.[8]
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