Abstract
BiFeO3 (BFO), Ti-doped BFO (BFTO), and Zn-doped BFO (BFZO) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a pulsed laser deposition method. The effects of the substitution of Zn and Ti were investigated. Increased remnant polarization (Pr) and reduced coercive electric field (2Ec) were observed in the BFZO thin film capacitor. The values of 2Pr and 2Ec of the BFO, BFZO, and BFTO films were 100 µC/cm2 and 678 kV/cm, 107 µC/cm2 and 540 kV/cm, and 100 µC/cm2 and 720 kV/cm, respectively. The measured leakage current density of the BFZO thin film was approximately two orders of magnitude lower than that of the BFO thin film.
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