Abstract
In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.
Highlights
Multiferroic materials, which exhibit simultaneously ferroelectric, ferromagnetic, antiferromagnetic, and ferroelastic behaviors, provide opportunities for potential applications in information storage, spintronic devices, and sensors [1]
We have already reported on the good dielectric properties, especially the high remanent polarization and low leakage current densities of Pb (Zr0.52Ti0.48)O3 [PZT] heterolayered thin films, which were alternately spin-coated using Pb(Zr0.20Ti0.80)O3 and Pb(Zr0.80Ti0.20)O3 metal alkoxide solutions [7]
BFO/PZT multilayer thin films were prepared using the sol-gel method, which were spin-coated on the Pt/Ti/ SiO2/Si substrate alternately using BFO and PZT metal alkoxide solutions
Summary
Multiferroic materials, which exhibit simultaneously ferroelectric, ferromagnetic, antiferromagnetic, and ferroelastic behaviors, provide opportunities for potential applications in information storage, spintronic devices, and sensors [1]. We have already reported on the good dielectric properties, especially the high remanent polarization and low leakage current densities of Pb (Zr0.52Ti0.48)O3 [PZT] heterolayered thin films, which were alternately spin-coated using Pb(Zr0.20Ti0.80)O3 and Pb(Zr0.80Ti0.20)O3 metal alkoxide solutions [7].
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