Abstract
Ferroelectric Bi3.6La0.4Ti3O12 (BLT) and Mn-doped (0.1 wt%, 0.2 wt%, and 0.3 wt%) BLT thin films were prepared by sol-gel processing. In the X-ray diffraction (XRD) results, all films exhibited a randomly oriented perovskite phase. Concerning surface morphology, the grain boundaries of the Mn-doped (0.2 wt%) BLT thin film are more closely packed than those of the nondoped BLT film without the presence of many crevices and cracks around the grain boundaries due to the volatilization of the Bi components at high temperature. The remanent polarization of the stoichiometric, 0.1 wt%, 0.2 wt% and 0.3 wt% Mn-doped BLT films annealed at a heating rate of 50°C/h, were 14 µC/cm2, 18 µC/cm2, 31 µC/cm2 and 13 µC/cm2, respectively. The 0.2 wt% Mn-doped BLT thin film is a good candidate for ferroelectric memory cells and nonvolatile random access memory (NvRAM) applications.
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