Abstract
CaBi2Nb2O9 (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm2 (2Pr ∼9.6 μC/cm2), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.
Highlights
Ferroelectric materials are widely used for various applications such as actuators, sensors, power generators, and non-volatile random access memories.[1,2,3,4,5,6] Among these ferroelectric materials, Pb(Zr, Ti)O3 (PZT) systems have been studied with a great deal of interest due to their high ferroelectric polarizations and piezoelectric coefficients
We investigate the ferroelectric properties of CBNO thin film grown on Pt/Ta/glass substrates via pulsed laser deposition (PLD)
The surface morphology and roughness of the CBNO thin film were evaluated via atomic force microscopy (AFM) and its ferroelectric domain structure was investigated using piezoresponse force microscopy (PFM)
Summary
Ferroelectric materials are widely used for various applications such as actuators, sensors, power generators, and non-volatile random access memories.[1,2,3,4,5,6] Among these ferroelectric materials, Pb(Zr, Ti)O3 (PZT) systems have been studied with a great deal of interest due to their high ferroelectric polarizations and piezoelectric coefficients. A great deal of effort has been devoted to lead-free ferroelectric materials, but most current materials in use have relatively low ferroelectric and piezoelectric properties as compared to PZT systems.[7,8] SrBi2Ta2O9 (SBT) thin films, known as Bi-layered ferroelectrics with an Aurivillius structure, have been intensively studied and are used in memory devices due to their high spontaneous polarizations and fatigue-free property.[9,10] CaBi2Nb2O9 (CBNO) compounds have attracted attention over the years;[11,12] few studies have been reported on thin-film-type materials.[13,14,15] Because the CBNO compounds show high Curie temperatures as Bi-layered ferroelectrics,[11] they show great potential for high-temperature device applications. We further demonstrate the switching and conduction current behavior of the polycrystalline CBNO thin film for device applications
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