Abstract
High quality epitaxial Bi 3.15Nd 0.85Ti 3O 12 (BNT) thin films with thicknesses from 30 to 80 nm have been integrated on SiO 2/Si substrates. MgO templates deposited by ion-beam-assisted deposition and SrRuO 3 (SRO) buffer layers processed by pulsed laser deposition have been used to initiate the epitaxial growth of BNT films on the amorphous SiO 2/Si substrates. The structural and ferroelectric properties were investigated. Microstructural studies by X-ray diffraction and transmission electron microscopy revealed high quality crystalline with an epitaxial relationship of (001) BNT||(001) SRO||(001) MgO and [100] BNT||[110] SRO||[110] MgO. A ferroelectric hysteresis loop with a remanent polarization of 3.1 μC/cm 2 has been observed for a 30 nm thick film. The polarization exhibits a fatigue-free characteristic up to 1.44 × 10 10 switching cycles.
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