Abstract
The Ferroelectric properties and Microstructures of Bi3.3Tb0.6Ti3O12 (BTT) and Bi3.3Tb0.6Ti2.97V0.03O12 (BTTV) ceramics prepared at 1100°C by a conventional ceramic technique were investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BTT ceramics are 23µC/cm2 and 80kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTTV ceramics up to 35μC/cm2, which is larger than that of the BTT ceramics. Therefore, co-sustitution of Tb and V in Bi4Ti3O12 (BIT) ceramic is effective for the improvement of its ferroelectricity.
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