Abstract
ABSTRACT High quality Ba0.8Sr0.2TiO3 (BST) ferroelectric thin films on the substrate Pt/Ti/SiO2/Si used for uncooled infrared focal plane arrays with a remnant polarization of about 4.1 μC/cm2, and a coercive field of about 60.9 kV/cm have been successfully prepared by RF magnetron sputtering. X-ray diffraction and atomic force microscopy investigations show that the BST films exhibit a tetragonal structure and consist dominantly of large column or grains of about 84.57 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies exhibit Curie transition at temperature around 292 K. The dielectric loss of BST thin films at 100 kHz are less than 0.02.
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