Ferroelectric Properties of Al-doped Lead Titanate Zirconate Thin Films Prepared by Chemical Solution Deposition Process

Abstract

2.5 and 5 mol% Al were doped to lead titanate zirconate (PZT) thin films using a chemical solution deposition process, and ferroelectric properties of Al-doped PZT thin films were compared with those of nondoped PZT film. Doped Al seems to be substituted at the Zr/Ti site (B site) since the c/a ratio decreased with increasing Al content. The shape of a P–E hysteresis curve of the thin films did not show remarkable differences between nondoped and Al-doped PZT. Values of Ps, Pr and Ec of the 2.5 mol% Al-doped PZT thin films were about 43 µC/cm2, 19 µC/cm2 and 58 kV/cm, respectively. On the other hand, the leakage current of the thin films showed a tendency to decrease with increasing Al content. The fatigue properties of the Al-doped PZT thin film showed a slight improvement, because the reduction rate of the fatigue was smaller than that of a nondoped PZT thin film.