Abstract
Pb(Zr0.52Ti0.48)O3 films with highly uniform c-axis orientation were fabricated on PbTiO3 (PT)/ Pt(111)/SiO2/Si(100) substrates by hot isostatic pressing (HIP) from the amorphous state. All the PZT samples HIP-treated 500°C for 1 h under gas pressures of 1.0–2.0 MPa showed the preferred (001) orientation with c-axis orientation, α > 0.80. The relative permittivity tended to decrease gently with increasing HIP pressure, whereas the dielectric loss increased almost linearly in the 1.5–100 MPa. The PZT sample treated at 1.5 MPa had a symmetric and slim hysteresis loop shape with a remanent polarization, P r = 15 μ C/cm2 and coercive field, E c = 60 kV/cm. Both samples treated at 10 and 100 MPa exhibited almost the fatigue-free behavior that resisted degradation even after 3 × 1010 cycles.
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