Abstract
ZnTiMnO layers grown on Pt (111)/Al2O3 (0001) substrates exhibit lattice displacement-induced ferroelectric features, which arise from a modulation in the lattice translation symmetry and originate from the substitution of Ti and Mn ions at Zn sites in ZnO’s host lattices. After annealing at 900°C, the ZnTiMnO layer shows a clear hysteresis loop, where the maximum polarization is fully saturated within wide electric-field regions. The top-to-bottom Pt/ZnTiMnO/Pt device reveals a polarization-dependent asymmetric hysteresis (i.e., ferroelectric memristive-switching); in addition, the device shows > 60% data-retention per 10 years. These results suggest that ZnTiMnO holds great promise for use in ferroelectric memristive-switching devices.
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