Ferroelectric polarization and fatigue characterization in bismuth-based Aurivillius thin films at lower voltage

Abstract

One of significant issue in ferroelectrics is so called “size effect”, that is ferroelectric properties may disappearance at a finite critical thickness, especially those films prepared by solution process. Here, the reliable polarization fatigue resistance and retention performance of chemical solution deposited Aurivillius family thin films Bi6Fe2Ti3O18 with thickness down to 90 nm and at low driving voltage are reported. Intrinsic ferroelectricity is insight and verified by PUND measurement, and further research demonstrate that it can compared with other thicker films. In addition, the voltage-dependence fatigues feature in Bi6Fe2Ti3O18 films have been demonstrated. Considerable remanent polarization 18.9 μC/cm2 and lower operating voltage 6 V make it not only as a promising ferroelectric material in memory application; it also endows non-vacuum solution process as a good alternative for ultrathin ferroelectric films.