Abstract
ABSTRACTLayer splitting by helium and/or hydrogen and wafer bonding was applied for the transfer of thin single-crystalline ferroelectric oxide layers onto different substrates. The optimum conditions for achieving blistering/splitting after post-implantation annealing were experimentally obtained for LiNbO3, LaAlO3, SrTiO3 single crystals and transparent PLZT ceramic. Under certain implantation conditions large area exfoliation instead of blistering occurs after annealing of as-implanted oxides. Small area single-crystal oxide layer transfer was successfully achieved.
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