Abstract
Abstract A status report is given on the development of thin-film ferroelectric memories, both by sputtering and by sol-gel techniques, integrated onto gallium arsenide or silicon. Emphasis is on lead zirconate titanate (PZT) materials. Progress in ferroelectric materials, electrical characterization, and circuit design is reviewed. Commercial parts recently developed by Ramtron Corp. and Krysalis Corp. are included, in addition to work by our own group.
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