Ferroelectric Gate FET Memory based on Conduction of SBT-SiON Interface

Abstract

ABSTRACTA new type of ferroelectric gate field-effect transistor (FET) using ferroelectric-insulator interface conduction has been proposed. Drain current flows along the interface between the ferroelectric and insulator layers and requires no semiconductor. This FET is fabricated by forming of source and drain electrodes on a SiON/Si substrate, dpositing SrBi2Ta2O9(SBT) film, forming topgate electrode, and forming bottom electrode. Drain current versus topgate voltage characteristics show a clockwise hysteresis loop similarly to the conventional metal-ferroelectric-insulator-semiconductor-FET(MFIS-FET). This FET shows that the On/Off ratio of the drain current is 104 to 105 and the Off state current of about 10−9 A.