Abstract
Thin ferroelectric BaxSr1–xTiO3 (BST) layers have been grown for the first time on semi-insulating silicon carbide substrates by RF magnetron sputtering of a ceramic target without using buffer sublayers. Results of investigation of the structure of obtained BST films and the electrical properties of related planar capacitors are presented. The obtained structures are characterized by high nonlinearity and low dielectric losses at microwave frequencies.
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