Abstract
We have developed and studied a new type of pyroelectric IR photodetector based on ferroelectric-field-effect transistor heterostructures with higher sensitivity and detectability than traditional pyroelectric photodetectors. Model samples of ferroelectric field-effect transistor were prepared using ZnO:Li films as a transistor channel and LiNbO3 or TGS crystals as a pyroelectric sensitive element.
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Schedule a callMore From: Journal of Contemporary Physics (Armenian Academy of Sciences)
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