Abstract
Using RF magnetron sputtering technique, the (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 and (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 thin films were successfully deposited and annealed on the Pt/Ti/SiO2/Silicon substrates, and their electrical and physical characteristics had been investigated and presented. The dielectric constant and leakage current density of as-deposited (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 thin films were obtained under optimal sputtering parameters. Additionally, the maximum dielectric constant and leakage current density of annealed BSTZ films under the rapid temperature annealing and conventional furnace annealing would be increased, as the temperature increased to 700°C. Further, the maximum remnant polarization and coercive field of (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 films were found and calculated from the P-E curves. Finally, for obtaining larger storage capacity and higher density of dynamic random access memory devices in the future, the experimental results indicated the correlation between the electrical characteristics and as-deposited/annealed BSTZ thin films under different post-treatment process.
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