Abstract
A metal–ferroelectric–insulator–semiconductor (MFIS) structure has been made using poly(vinylidene difluoride–trifluoroethylene)/barium titanate [P(VDF–TrFE)/BaTiO3] nanocomposite as ferroelectric layer, on silicon/silicon dioxide (Si/SiO2) substrate. Different concentrations of BaTiO3 were added to P(VDF–TrFE) polymer using bath sonication method, and the films were prepared using spin coating method. The structure was annealed to 120 °C for 2 h and then the top aluminium electrode was deposited by thermal evaporation method. Capacitance–voltage shows an increase in accumulation capacitance as the BaTiO3 nanoparticle concentrations increases. Dielectric constant was estimated from the capacitance voltage (C–V) characteristics and found to be changing as the concentration of BaTiO3 is varied. Polarization–electric field analyses show hysteresis behaviour of the nanocomposite. A comparison of MFIS and metal–ferroelectric–semiconductor structures was done with varying ferroelectric film thicknesses. All these results suggest that this polymer nanocomposite can be a promising material which can be used in non-volatile memory devices.
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