Abstract
Single phase Pb(Ti(0.8)Fe(0.2))O(3-δ) thin films with a thickness of 210 nm and 120 nm were fabricated on Pt/Ti/SiO(2)/Si substrate by a chemical solution deposition technique. The thin film with a thickness of 210 nm showed a homogeneous microstructure, low porosity, low oxygen vacancies, and preferred orientation. It had negligible leakage current and well saturated ferroelectric hysteresis loop compared with the Pb(Ti(0.8)Fe(0.2))O(3-δ) bulk sample. Polarization fatigue characteristic indicated that this film has a potential application as a switcher in some electrical devices. The saturation magnetization in the Fe-doped PbTiO(3) film is weaker than that for bulk sample, and its ferromagnetism is correlated to the F-center exchange (FCE) mechanism. The present results revealed the multiferroic nature of the Pb(Ti(0.8)Fe(0.2))O(3-δ) thin film.
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