Abstract
Orthorhombic PtGeSe, with a = 6.00984 ± 0.00004, b = 6.06174 ± 0.00005 and c = 5.98187 ± 0.00005 Å at 298°K ( λCuK α 1 = 1.540562 A), is predicted on the basis of atomic coordinates reported by Entner and Parthé (Acta Cryst. (1973) B29, 1557) to be ferroelastic. Crystals with volume as large as 10 mm 3 have been grown at about 1500°K from the elements by unidirectional solidification. The twinning in many as-grown crystals corresponds to interchange among the principal lattice vectors. Uniaxial stress of about 16 MNm −2 is sufficient to eliminate all but one lattice vector along the stress direction and interchange lattice vectors in single domains. The ferroelastic behavior is accounted for by three independent atomic mechanisms. Some of the resulting atomic displacements, for Ge and Se, are as large as 2 Å. The resistivity of PtGeSe is 8.18×10 −3 ohm-cm at 300°K, 3.21×10 −1 ohm-cm at 4.2°K.
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