Fermi surfaces of the half-Heusler compounds [formula omitted

Abstract

We report on the Fermi surface in the correlated half-Heusler compounds Ce 1 - x La x BiPt . In CeBiPt, as well as in Ce 0.95 La 0.05 BiPt , we find a temperature-dependent Fermi-surface topology. In addition, we observe a field-induced change of the electronic band structure as discovered by electrical-transport measurements in pulsed magnetic fields. For magnetic fields above ∼ 25 T , in a simple one band picture, the charge-carrier concentration determined from Hall-effect measurements increases nearly 30%, whereas the Shubnikov-de Haas (SdH) signal disappears at the same field. In the non-4f compound LaBiPt the Fermi surface remains unaffected, suggesting that these features are intimately related to the Ce 4f electrons. Electronic band–structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology.