Abstract
Schottky barrier heights of metal (Al, Au, Ni, and Pt) contacts on boron (B)-doped (111) homoepitaxial diamond films are investigated as a function of surface oxidation treatments before metal deposition [after wet-chemical oxidation (WO), WO followed by annealing in Ar atmosphere (WO-AN) and air oxidation]. It is found that the Schottky barrier height (ϕB) depends on the metal work function (ϕM) (Sϕ≡dϕB∕dϕM>0.3) on surfaces only after WO-AN, indicating that the interface at metals/B-doped (111) films after WO-AN has fewer defect states which do not pin the Fermi level. Experimental results and the appearance of a p-type surface conductive layer (SCL) are discussed and it is concluded that the pinning-free nature of the Fermi level is related to the appearance of a SCL.
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