Abstract
Ballistic electron emission microscopy (BEEM) has been used to determine the Fermi-level pinning position at the Au/InAs interface. Using BEEM’s three-terminal capabilities, collector current–voltage scans were taken on Au/InAs/AlSb samples. The extracted BEEM threshold values (1.22 eV) correspond to the highest energy band position in the conduction band at the InAs/AlSb interface. By subtracting the InAs/AlSb conduction-band offset (1.35 eV), an estimate of the Au Fermi-level position on InAs is obtained (0.13 eV).
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