Abstract
The observed variation of the Schottky barrier height in ionized-cluster-beam (ICB)-deposited Ag/Si Schottky structures is described within the framework of the disorder-induced gap stated theory (DIGS). The physical mechanisms determining the position of the Fermi level in ICB Schottky structures under different regimes of acceleration voltage are suggested, emphasizing the role of the local electronic structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have