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Abstract
Charge transfer complex (CPX) formation at a donor–acceptor interface reduces the amount of Fermi-level pinning induced interfacial charge transfer.
Highlights
Planar two-layer structures of separate D and A on top of each other have been investigated in organic field-effect transistors (OFET),[8,9,10,11] as this provides for transport channels for both electrons and holes in the two semiconductor layers
We unravelled the mechanism that leads to increased hole density in the organic semiconductor DIP, next to a gate dielectric in an OFET structure, upon deposition of a molecular acceptor layer on top
Our results highlight the importance of the gate dielectric for understanding the spatial carrier density distribution in OFETs that employ D–A interfaces for enhancing the performance
Summary
Planar two-layer structures of separate D and A on top of each other have been investigated in organic field-effect transistors (OFET),[8,9,10,11] as this provides for transport channels for both electrons and holes in the two semiconductor layers. It was observed that the threshold voltage in two-layer OFETs differs from the respective single-layer devices, which was related to CT and local doping at the D–A interface.[8,9,10,11] An increased charge carrier density, associated with (partial) filling of trap states can result in a lower threshold voltage.[12,13]. Electrostatic modelling has highlighted that integer CT at D–A heterojunction interfaces can occur if needed to reach electronic equilibrium, with respective charge accumulation and energy level bending on either side of the junction.[14] This type of CT can be long-range and has been described within the framework of Fermi level (EF) pinning,[14,15] originally developed for electrode-semiconductor contacts.[16,17] This phenomenon has enabled the observation of metallic conductivity at a junction between two molecular D and A single crystals,[18] and, more recently, substantial ground-state CT at conjugated polymer heterojunctions.[19]
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